A simplified view of the gallium nitride-based resonant tunneling diode developed at the U.S. Naval Research Laboratory’s Electronic Science and Technology Division and its performance characteristics. NRL researchers anticipate this RTD will enable technologies beyond 5G and created a process to deliver manufacturing yield of approximately 90%.
Date Taken: | 03.19.2020 |
Date Posted: | 05.12.2020 08:55 |
Photo ID: | 6202631 |
VIRIN: | 200508-N-NO204-0001 |
Resolution: | 3826x2116 |
Size: | 1.13 MB |
Location: | US |
Web Views: | 18 |
Downloads: | 2 |
This work, NRL researchers create electronic diodes beyond 5G performance, by Daniel Parry, identified by DVIDS, must comply with the restrictions shown on https://www.dvidshub.net/about/copyright.
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