David Storm, a research physicist, and Tyler Growden, a National Research Council postdoctoral researcher, at the U.S. Naval Research Laboratory with their molecular beam epitaxy system that develops gallium nitride-based (GaN) semiconductors in Washington, D.C., March 10, 2020. Storm and Growden published their research on GaN semiconductor materials, which showed high yield and performance well suited for high frequency and high power electronic devices in Applied Physics Letters.
| Date Taken: | 03.10.2020 |
| Date Posted: | 05.12.2020 08:54 |
| Photo ID: | 6202629 |
| VIRIN: | 200310-N-UI176-1103 |
| Resolution: | 6048x4024 |
| Size: | 10.76 MB |
| Location: | US |
| Web Views: | 96 |
| Downloads: | 7 |
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