SAMPLE CELL GERMANIUM OVERFLOW OF THE DIFFUSION PROCESS IN MOLTEN SEMICONDUCTOR FLIGHT EXPERIMENT DPIMS

WASHINGTON, D.C., UNITED STATES

09.17.2009

Courtesy Photo

NASA

SAMPLE CELL GERMANIUM OVERFLOW OF THE DIFFUSION PROCESS IN MOLTEN SEMICONDUCTOR FLIGHT EXPERIMENT DPIMS

NASA Identifier: GRC-C-1996-2993

• Date Taken: 09.17.2009
• Date Posted: 02.08.2013 21:56
• Photo ID: 860092
• Resolution: 2500x2000
• Size: 443.97 KB
• Location: WASHINGTON, D.C., US